advanced power p-channel enhancement mode electronics corp. power mosfet capable of 2.5v gate drive bv dss -20v lower on-resistance r ds(on) 21m fast switching characteristic i d -9a rohs compliant & halogen-free description absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 50 /w data and specifications subject to change without n otice halogen-free product thermal data parameter total power dissipation 2.5 -55 to 150 operating junction temperature range -55 to 150 storage temperature range continuous drain current 3 -7.1 pulsed drain current 1 -40 parameter drain-source voltage gate-source voltage continuous drain current 3 201408222 1 ap9620agm-hf rating -20 + 8 -9 advanced power mosfets from apec provide the designer with the best combination of fast switchin g, ruggedized device design, low on-resistance and cos t-effectiveness. the so-8 package is widely preferred for all commer cial-industrial surface mount applications and suited for low volta ge applications such as dc/dc converters. s s s g d d d d so-8 g d s .
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-9a - - 21 m v gs =-2.5v, i d =-6a - - 35 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 -0.6 -1 v g fs forward transconductance v ds =-10v, i d =-9a - 33 - s i dss drain-source leakage current v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 100 na q g total gate charge 2 i d =-9a - 26 42 nc q gs gate-source charge v ds =-10v - 3 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 9 - nc t d(on) turn-on delay time 2 v ds =-10v - 12 - ns t r rise time i d =-1a - 18 - ns t d(off) turn-off delay time r g =3.3 - 78 - ns t f fall time v gs =-5v - 57 - ns c iss input capacitance v gs =0v - 2200 3520 pf c oss output capacitance v ds =-15v - 270 - pf c rss reverse transfer capacitance f=1.0mhz - 250 - pf r g gate resistance f=1.0mhz - 4.7 9.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-2.1a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-9a, v gs =0 v , - 41 - ns q rr reverse recovery charge di/dt=100a/s - 26 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 125 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . apec does not assume any liability arising out of t he application or use of any product or circuit des cribed herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 2 ap9620agm-hf .
ap9620agm-hf fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 0 1 2 3 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 25 o c -5.0v -4.5v -3.5v -2.5v v g = - 2.0v 0 10 20 30 40 0 1 2 3 4 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 150 o c -5.0v -4.5v -3.5v -2.5v v g = - 2.0v 16 18 20 22 24 26 28 1 2 3 4 5 -v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = -6 a t a =25 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -9 a v g =- 4.5 v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c i d =-250ua .
ap9620agm-hf fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 1 2. gate charge waveform 4 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 400 800 1200 1600 2000 2400 2800 1 5 9 13 17 21 25 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0 2 4 6 8 0 10 20 30 40 50 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d = -9a v ds = -10v 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =125 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse operation in this area limited by r ds(on) .
ap9620agm-hf marking information 5 9620agm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only .
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